schottky barrier diode
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网络 肖特基二极管; 肖特基势垒二极管; 萧特基二极体; 极管; 肖特基二极体
双语例句
- Silicon high-current Schottky barrier switching diode
硅大电流肖特基开关二极管 - As an example, Schottky barrier diode characteristics is simulated using this method. Study on the Characteristics of Electric Contact between Pantograph and Overhead Contact Line
以肖特基势垒二极管为例，应用该方法，实现了高接触势垒情形下的正反向电流模拟。受电弓&接触网系统电接触特性研究 - Life Prediction of Power Schottky Barrier Diode Based on the Method of Parameter Degeneration
基于参数退化法评价功率肖特基二极管寿命 - 8mm GaAs Beam Lead Schottky Barrier Mixer Diode
八毫米GaAs梁式引线肖特基势垒混频管 - Interface analysis and electric characteristics of palladium SILICIDE-P-TYPE Silicon Schottky barrier diode
硅化钯-P型硅肖特基势垒二极管的界面分析与电特性 - As the development of electrical and electronic technology, there should be an extensive prospect of Schottky barrier diode with its merits of high response frequency and low power consumption.
随着电力电子技术的蓬勃发展，肖特基二极管的高频、低功耗等优良性能将为其赢得广阔的发展前景。 - Application of Power Factor Correction Circuits with SiC-Based Schottky Barrier Diode
SiC肖特基势垒二极管在PFC电路中的应用 - Study on Gas Sensitivity of Pt/ InP Schottky Barrier Diode
Pt／InP肖特基二极管气敏特性的研究 - This paper described the design thinking and the working principle of schottky barrier diode reverse impulse energy tester.
本文叙述了肖特基二极管及反向脉冲能量测试仪的设计思想及工作原理。 - To satisfy the requirement for high performance infrared detector, a selective epitaxy Schottky barrier diode of SiGe was realized based on high quality silicon device.
为了满足高性能的红外探测要求，以高品质硅基器件研制了选择性外延锗硅肖特基二极管。 - Schottky Barrier Diode ( SBD) is based on the rectification characteristics of metal-semiconductor contact.
肖特基势垒二极管是利用金属半导体的整流接触特性而制成的二极管。 - In the way of MOS taking place of the Fast recovery diode and the Schottky barrier diode, it can cut down on-resistance and reduce the rectification loss.
同步整流技术采用低导通电阻的MOS管代替导通压降相对较大的快恢复二极管或肖特基二极管，大大减小了输出整流损耗，效率相对提高。 - Computer Analyses of 3C-SiC Schottky Barrier Diode Characteristics
3C-SiC功率肖特基二极管特性的计算机分析 - Research on Guard Ring Structure of Schottky Barrier Diode
肖特基二极管保护环结构的研究 - The Characteristics of Ni ( Pt) Si/ Si Schottky Barrier Diode with Deep Trench
深槽Ni（Pt）Si/Si肖特基二极管特性研究 - From the engineering requirements, 2 state models for the schottky barrier diode and 4 state models for the schottky clamped transistor have been set up. Two typical circuits are analyzed and researched.
从工程实际出发，分别建立了肖特基势垒二极管（SBD）二态模型和肖特基钳位三极管（SCT）四态模型的电路模型，分析并研究了这两个典型的应用电路。 - Series resistance is an important factor confining the response speed of Schottky barrier diode.
串连电阻是制约肖特基二极管响应速度的一个关键因素。 - S Schottky Barrier Diode Reveres Impulse Energy Tester
肖特基二极管反向脉冲能量测试仪 - Avalanche noise source of Schottky barrier diode in the 3 mm band
3mm肖特基势垒二极管雪崩噪声源 - Schottky barrier diode is a kind of majority carrier device, using the contact barrier formed between metal and semiconductor to work. It has the advantages of low turn-on voltage and high response frequency, compared with PN junction diodes.
肖特基二极管是利用金属与半导体之间接触势垒进行工作的一种多数载流子器件，与普通的PN结二极管相比，它具有正向导通电压低，响应速度快等优良特性。 - The interface property of palladium silicide-silicon ( P-type) Schottky Barrier Diode ( SBD) has been studied by AES spectrum and EBIC image. The thickness of Pd_x Si_y layer and the deepness of schottky "junction" are estimated.
对硅化钯-P型硅肖特基势垒二极管（SBD）的界面性质作了AES谱和EBIC像分析，估算了PdxSiy层厚度和肖特基结的结深。 - Investigation On Thermal Stability of Ni ( Zr) Si Thin Film and Electrical Characteristics of Its Schottky Barrier Diode
Ni（Zr）Si薄膜热稳定性及其肖特基势垒二极管的电学特性 - The output characteristic and the admittance of the Schottky barrier diode was obtained by numeric simulation, and the SBHs extracted by both admittance and the conventional I-V fitting were compared.
通过数值模型模拟肖特基二极管的输出特性和导纳值，比较了电流-电压拟合以及导纳谱法提取的肖特基势垒高度的差别。 - On the high-temperature devices such as Schottky Barrier Diode ( SBD) and Metal Semiconductor Field Effect Transistor ( MESFET), the utilizing of ion-implantation can make fabrication processes simpler and the expenses cheaper.
在高温肖特基二极管（SBD）器件和金属半导体场效应晶体管（MESFET）器件的制备方面，离子注入具有使制备工艺简单、降低成本等优点。 - Schottky barrier diode as a majority carrier device with high switching speed has been widely used in power circuit. But, in order to achieve high breakdown voltage, the concentrate of the drift region need to be lower enough, and the specific on-resistance improved a lot.
肖特基势垒二极管作为一种多子器件具有很高的开关速度，但是要做到耐压很高就需要降低漂移区载流子的浓度，从而使正向导通电阻很大。